Archive (former LMN)

Papers published 2021

  • 4H-SiC(0001) Surface Faceting during Interaction with Liquid Si Soulière V, Carole D, Camarda M, Woerle J, Grossner U, Dezellus O, Ferro G
    MATERIALS SCIENCE FORUM 858, 163 (2016).
    DOI: 10.4028/www.scientific.net/MSF.858.163
  • A beam branching method for timing and spectral characterization of hard X-ray free-electron lasers Katayama Tetsuo, Owada Shigeki, Togashi Tadashi, Ogawa Kanade, Karvinen Petri, Vartiainen Ismo, Eronen Anni, David Christian, Sato Takahiro, Nakajima Kyo, Joti Yasumasa, Yumoto Hirokatsu, Ohashi Haruhiko, Yabashi Makina
    STRUCTURAL DYNAMICS 3, 034301 (2016).
    DOI: 10.1063/1.4939655
  • A bottom-up pattern collapse mitigation strategy for EUV lithography Panning Eric M, Goldberg Kenneth A, Kulmala Tero S, Vockenhuber M, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2219735
  • Accurate strain measurements in highly strained Ge microbridges Gassenq A, Tardif S, Guilloy K, Dias G Osvaldo, Pauc N, Duchemin I, Rouchon D, Hartmann J M, Widiez J, Escalante J, Niquet Y M, Geiger R, Zabel T, Sigg H, Faist J, Chelnokov A, Rieutord F, Reboud V, Calvo V
    APPLIED PHYSICS LETTERS 108, 241902 (2016).
    DOI: 10.1063/1.4953788
  • Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmions at room temperature Moreau-Luchaire C, Moutafis C, Reyren N, Sampaio J, Vaz CAF, Van Horne N, Bouzehouane K, Garcia K, Deranlot C, Warnicke P, Wohlhüter P, George JM, Weigand M, Raabe J, Cros V, Fert A
    Nature Nanotechnology 11, 444 (2016).
    DOI: 10.1038/nnano.2015.313
  • Calibration status and plans for the charge integrating JUNGFRAU pixel detector for SwissFEL Redford S, Bergamaschi A, Brückner M, Cartier S, Dinapoli R, Ekinci Y, Fröjdh E, Greiffenberg D, Mayilyan D, Mezza D, Mozzanica A, Rajeev R, Ramilli M, Ruder C, Schädler L, Schmitt B, Shi X, Thattil D, Tinti G, Zhang J
    JOURNAL OF INSTRUMENTATION 11, C11013 (2016).
    DOI: 10.1088/1748-0221/11/11/C11013
  • Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure Panning Eric M, Goldberg Kenneth A, Nagahara S, Carcasi M, Nakagawa H, Buitrago E, Yildirim O, Shiraishi G, Terashita Y, Minekawa Y, Yoshihara K, Tomono M, Mizoguchi H, Estrella J, Nagai T, Naruoka T, Dei S, Hori M, Oshima A, Vockenhuber M, Ekinci Y, Meeuwissen M, Verspaget C, Hoefnagels R, Rispens G, Maas R, Nakashima H, Tagawa S
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2219433
  • CoFe 2 O 4 and CoFe 2 O 4 -SiO 2 Nanoparticle Thin Films with Perpendicular Magnetic Anisotropy for Magnetic and Magneto-Optical Applications Erdem D, Bingham Nicholas S, Heiligtag Florian J, Pilet N, Warnicke P, Heyderman Laura J, Niederberger M
    ADVANCED FUNCTIONAL MATERIALS 26, 1954 (2016).
    DOI: 10.1002/adfm.201504538
  • Comparative study of line roughness metrics of chemically amplified and inorganic resists for EUV Hohle Christoph K, Younkin Todd R, Fallica R, Buitrago E, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2217766
  • Comparative study of line roughness metrics of chemically amplified and inorganic resists for extreme ultraviolet Fallica R, Buitrago E, Ekinci Y
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 15, 034003 (2016).
    DOI: 10.1117/1.JMM.15.3.034003
  • Comparative study of resists and lithographic tools using the Lumped Parameter Model Fallica R, Kirchner R, Ekinci Y, Mailly D
    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 34, 06K702 (2016).
    DOI: 10.1116/1.4967183
  • Configuring Electronic States in an Atomically Precise Array of Quantum Boxes Nowakowska S, Wäckerlin A, Piquero-Zulaica I, Nowakowski J, Kawai S, Wäckerlin C, Matena M, Nijs T, Fatayer S, Popova O, Ahsan A, Mousavi SFatemeh, Ivas T, Meyer E, Stöhr M, Ortega JEnrique, Björk J, Gade Lutz H, Lobo-Checa J, Jung Thomas A
    SMALL 12, 3757 (2016).
    DOI: 10.1002/smll.201600915
  • Dopant imaging of power semiconductor device cross sections Gysin U, Meyer E, Glatzel Th, Günzburger G, Rossmann HR, Jung TA, Reshanov S, Schöner A, Bartolf H
    MICROELECTRONIC ENGINEERING 160, 18 (2016).
    DOI: 10.1016/j.mee.2016.02.056
  • Dynamic absorption coefficients of CAR and non-CAR resists at EUV Panning Eric M, Goldberg Kenneth A, Fallica R, Stowers Jason K, Grenville A, Frommhold A, Robinson Alex PG, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2219193
  • Dynamic absorption coefficients of chemically amplified resists and nonchemically amplified resists at extreme ultraviolet Fallica R, Stowers Jason K, Grenville A, Frommhold A, Robinson Alex PG, Ekinci Y
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 15, 033506 (2016).
    DOI: 10.1117/1.JMM.15.3.033506
  • Effect of nanoimprint on the elastic modulus of PMMA: Comparison between standard and ultrafast thermal NIL Pianigiani Michele, Kirchner Robert, Sovernigo Enrico, Pozzato Alessandro, Tormen Massimo, Schift Helmut
    MICROELECTRONIC ENGINEERING 155, 85-91 (2016).
    DOI: 10.1016/j.mee.2016.03.019
  • Electron-Beam Lithographic Grafting of Functional Polymer Structures from Fluoropolymer Substrates Gajos K, Guzenko Vitaliy A, Dübner M, Haberko J, Budkowski A, Padeste C
    LANGMUIR 32, 10641 (2016).
    DOI: 10.1021/acs.langmuir.6b02808
  • Establishing nonlinearity thresholds with ultraintense X-ray pulses Szlachetko J, Hoszowska J, Dousse JC, Nachtegaal M, Blachucki W, Kayser Y, Sa J, Messerschmidt M, Boutet S, Williams Garth J, DC, Smolentsev G, van Bokhoven JA, Patterson BD, Penfold TJ, Knopp G, Pajek M, Abela R, Milne CJ
    Scientific Reports 6, 33292 (2016).
    DOI: 10.1038/srep33292
  • Fabrication and characterization of high-efficiency double-sided blazed x-ray optics Mohacsi I, Vartiainen I, Guizar-Sicairos M, Karvinen P, Guzenko Vitaliy A, Müller E, Kewish Cameron M, Somogyi A, David C
    OPTICS LETTERS 41, 281 (2016).
    DOI: 10.1364/OL.41.000281
  • From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute Lérondel G, Kawata S, Cho Y, Buitrago E, Fallica R, Fan D, Karim W, Vockenhuber M, van Bokhoven Jeroen A, Ekinci Y
    SPIE NANOSCIENCE + ENGINEERING , (2016).
    DOI: 10.1117/12.2238805
  • High fidelity 3D thermal nanoimprint with UV curable polydimethyl siloxane stamps Chidambaram Nachiappan, Kirchner Robert, Altana Mirco, Schift Helmut
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34, 06K401 (2016).
    DOI: 10.1116/1.4961250
  • High-resolution, high-aspect-ratio iridium-nickel composite nanoimprint molds Lee ChangSheng, Lee YeongYuh, Chong Karen S L, Wang Li, Dais Christian, Clube Francis, Solak Harun H, Mohacsi Istvan, David Christian, Bischofberger Roger
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34, 061804 (2016).
    DOI: 10.1116/1.4967696
  • In situ membrane bending setup for strain-dependent scanning transmission x-ray microscopy investigations Finizio S, Wintz S, Kirk E, Raabe J
    REVIEW OF SCIENTIFIC INSTRUMENTS 87, 123703 (2016).
    DOI: 10.1063/1.4971849
  • Integrated Photonic Nanofences: Combining Subwavelength Waveguides with an Enhanced Evanescent Field for Sensing Applications Cadarso Victor J, Llobera A, Puyol M, Schift H
    ACS Nano 10, 778 (2016).
    DOI: 10.1021/acsnano.5b05864
  • Integrated hollow microneedle-optofluidic biosensor for therapeutic drug monitoring in sub-nanoliter volumes Ranamukhaarachchi Sahan A, Padeste C, Dübner M, Häfeli Urs O, Stoeber B, Cadarso Victor J
    Scientific Reports 6, 29075 (2016).
    DOI: 10.1038/srep29075
  • Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging Rossmann HR, Gysin U, Bubendorf A, Glatzel T, Reshanov SA, Zhang A, Schöner A, Jung TA, Meyer E, Bartolf H
    MATERIALS SCIENCE FORUM 858, 497 (2016).
    DOI: 10.4028/www.scientific.net/MSF.858.497
  • Magnetic diffuse scattering in artificial kagome spin ice Sendetskyi O, Anghinolfi L, Scagnoli V, Möller G, Leo N, Alberca A, Kohlbrecher J, Lüning J, Staub U, Heyderman L
    PHYSICAL REVIEW B 93, 224413-1 (2016).
    DOI: 10.1103/PhysRevB.93.224413
  • Magnetoelectroelastic control of magnetism in an artificial multiferroic Heidler J, Fechner M, Chopdekar RV, Piamonteze C, Dreiser J, Jenkins CA, Arenholz E, Rusponi S, Brune H, Spaldin NA, Nolting F
    PHYSICAL REVIEW B 94, 014401 (2016).
    DOI: 10.1103/PhysRevB.94.014401
  • Measurement of transverse emittance and coherence of double-gate field emitter array cathodes Tsujino S, Das Kanungo P, Monshipouri M, Lee C, Miller RJD
    NATURE COMMUNICATIONS 7, 13976 (2016).
    DOI: 10.1038/ncomms13976
  • Nanolithography using Bessel Beams of Extreme Ultraviolet Wavelength Fan D, Wang L, Ekinci Y
    Scientific Reports 6, 31301 (2016).
    DOI: 10.1038/srep31301
  • Novel High Sensitivity EUV Photoresist for Sub-7 nm Node Nagai T, Nakagawa H, Naruoka T, Dei S, Tagawa S, Oshima A, Nagahara S, Shiraishi G, Yoshihara K, Terashita Y, Minekawa Y, Buitrago E, Ekinci Y, Yildirim O, Meeuwissen M, Hoefnagels R, Rispens G, Verspaget C, Maas R
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 29, 475 (2016).
    DOI: 10.2494/photopolymer.29.475
  • Novel high sensitivity EUV photoresist for sub-7nm node Hohle Christoph K, Younkin Todd R, Nagai T, Nakagawa H, Naruoka T, Tagawa S, Oshima A, Nagahara S, Shiraishi G, Yoshihara K, Terashita Y, Minekawa Y, Buitrago E, Ekinci Y, Yildirim O, Meeuwissen M, Hoefnagels R, Rispens G, Verspaget C, Maas R
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2218936
  • ON/OFF Switching of Silicon Wafer Electrochemistry by pH-Responsive Polymer Brushes Panzarasa G, Dübner M, Pifferi V, Soliveri G, Padeste C
    J. Mater. Chem. C , (2016).
    DOI: 10.1039/C6TC01822J
  • On spectral and temporal coherence of x-ray free-electron laser beams Ahad Lutful, Vartiainen Ismo, Setala Tero, Friberg Ari T, David Christian, Makita Mikako, Turunen Jari
    OPTICS EXPRESS 24, 13081-13090 (2016).
    DOI: 10.1364/OE.24.013081
  • Optically Pumped GeSn Microdisk Lasers on Si Stange Daniela, Wirths Stephan, Geiger Richard, Schulte-Braucks Christian, Marzban Bahareh, von den Driesch Nils, Mussler Gregor, Zabel Thomas, Stoica Toma, Hartmann JeanMichel, Mantl Siegfried, Ikonic Zoran, Gruetzmacher Detlev, Sigg Hans, Witzens Jeremy, Buca Dan
    ACS PHOTONICS 3, 1279-1285 (2016).
    DOI: 10.1021/acsphotonics.6b00258
  • Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography Panning Eric M, Goldberg Kenneth A, Frommhold A, McClelland A, Roth J, Fallica Roberto A, Ekinci Y, Robinson Alex PG
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2219221
  • PHOTONIC NANOFENCES FOR INTEGRATED SUB-WAVELENGTH STRUCTURES-BASED SENSING APPLICATIONS Cadarso Victor J, Llobera Andreu, Puyol Mar, Schift Helmut
    2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) , 909-912 (2016).
  • Pattern collapse mitigation in inorganic resists via a polymer freeze technique Kulmala Tero S, Buitrago E, Vockenhuber M, Ekinci Y
    MICROELECTRONIC ENGINEERING 155, 39 (2016).
    DOI: 10.1016/j.mee.2016.02.024
  • Patterning of diamond like carbon films for sensor applications using silicon containing thermoplastic resist (SiPol) as a hard mask Virganavicius D, Cadarso V J, Kirchner R, Stankevicius L, Tamulevicius T, Tamulevicius S, Schift H
    APPLIED SURFACE SCIENCE 385, 145-152 (2016).
    DOI: 10.1016/j.apsusc.2016.05.100
  • Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility Fan D, Buitrago E, Yang S, Karim W, Wu Y, Tai R, Ekinci Y
    MICROELECTRONIC ENGINEERING 155, 55 (2016).
    DOI: 10.1016/j.mee.2016.02.026
  • Photolithography reaches 6 nm half-pitch using EUV light Panning Eric M, Goldberg Kenneth A, Fan D, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY , (2016).
    DOI: 10.1117/12.2219737
  • Photolithography reaches 6 nm half-pitch using extreme ultraviolet light Fan D, Ekinci Y
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 15, 033505 (2016).
    DOI: 10.1117/1.JMM.15.3.033505
  • Probing the Reactivity of Functionalized Surfaces by Porphyrin Metalation Nowakowski J, Nowakowska S, Srivastava G, Baljozovic M, Girovsky J, Ballav N, Jung TA
    ChemistrySelect 1, 891 (2016).
    DOI: 10.1002/slct.201600215
  • Room-temperature macromolecular crystallography using a micro-patterned silicon chip with minimal background scattering Roedig Philip, Duman Ramona, Sanchez-Weatherby Juan, Vartiainen Ismo, Burkhardt Anja, Warmer Martin, David Christian, Wagner Armin, Meents Alke
    JOURNAL OF APPLIED CRYSTALLOGRAPHY 49, 968-975 (2016).
    DOI: 10.1107/S1600576716006348
  • Scanning coherent diffractive imaging methods for actinic EUV mask metrology Helfenstein P, Mohacsi I, Rajendran R, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY 9776, 97761F (2016).
    DOI: 10.1117/12.2219937
  • Scanning coherent diffractive imaging methods for actinic extreme ultraviolet mask metrology Helfenstein P, Mohacsi I, Rajeev R, Ekinci Y
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 15, 034006 (2016).
    DOI: 10.1117/1.JMM.15.3.034006
  • Scanning coherent scattering methods for actinic EUV mask inspection Ekinci Y, Helfenstein P, Rajeev R, Mochi I, Mohacsi I, Gobrecht J, Yoshitake S
    SPIE PHOTOMASK TECHNOLOGY 9985, 99851P (2016).
    DOI: 10.1117/12.2242961
  • Scanning scattering contrast microscopy for actinic EUV mask inspection Mohacsi I, Helfenstein P, Rajendran R, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY 9778, 97781O (2016).
    DOI: 10.1117/12.2220027
  • Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography Panning Eric M, Goldberg Kenneth A, Buitrago E, Nagahara S, Yildirim O, Nakagawa H, Tagawa S, Meeuwissen M, Nagai T, Naruoka T, Verspaget C, Hoefnagels R, Rispens G, Shiraishi G, Terashita Y, Minekawa Y, Yoshihara K, Oshima A, Vockenhuber M, Ekinci Y
    SPIE ADVANCED LITHOGRAPHY 9776, 977612 (2016).
    DOI: 10.1117/12.2220026
  • Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography Buitrago E, Nagahara S, Yildirim O, Nakagawa H, Tagawa S, Meeuwissen M, Nagai T, Naruoka T, Verspaget C, Hoefnagels R, Rispens G, Shiraishi G, Terashita Y, Minekawa Y, Yoshihara K, Oshima A, Vockenhuber M, Ekinci Y
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS 15, 033502 (2016).
    DOI: 10.1117/1.JMM.15.3.033502
  • Shot-to-shot diagnostic of the longitudinal photon source position at the SPring-8 Angstrom Compact Free Electron Laser by means of x-ray grating interferometry Kayser Y, Rutishauser S, Katayama T, Kameshima T, Ohashi H, Flechsig U, Yabashi M, David C
    OPTICS LETTERS 41, 733 (2016).
    DOI: 10.1364/OL.41.000733
  • Size-dependent redox behavior of iron observed by in-situ single nanoparticle spectro-microscopy on well-defined model systems Karim W, Kleibert A, Hartfelder U, Balan A, Gobrecht J, van Bokhoven JA, Ekinci Y
    Scientific Reports 6, 18818 (2016).
    DOI: 10.1038/srep18818
  • SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography Buitrago E, Fallica R, Fan D, Kulmala Tero S, Vockenhuber M, Ekinci Y
    MICROELECTRONIC ENGINEERING 155, 44 (2016).
    DOI: 10.1016/j.mee.2016.02.023
  • Stabilization of alkali metal ions interaction with OH-functionalized graphene via clustering of OH groups ? implications in charge storage applications Dobrota Ana S, Gutic S, Kalijadis A, Baljozovic M, Mentus Slavko V, Skorodumova Natalia V, Pa?ti Igor A
    RSC ADVANCES 6, 57910 (2016).
    DOI: 10.1039/C6RA13509A
  • Surface Charge Storage Properties of Selected Graphene Samples in pH-neutral Aqueous Solutions of Alkali Metal Chlorides - Particularities and Universalities Gutic S, Dobrota A, Gavrilov N, Baljozovic M, Pasti I, Mentus S
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE 11, 8662 (2016).
    DOI: 10.20964/2016.10.47
  • THz near-field enhancement by means of isolated dipolar antennas: the effect of finite sample size Savoini Matteo, Gruebel Sebastian, Bagiante Salvatore, Sigg Hans, Feurer Thomas, Beaud Paul, Johnson Steven L
    OPTICS EXPRESS 24, 4552-4562 (2016).
    DOI: 10.1364/OE.24.004552
  • Total Sample Conditioning and Preparation of Nanoliter Volumes for Electron Microscopy Arnold Stefan A, Albiez S, Opara N, Chami M, Schmidli C, Bieri A, Padeste C, Stahlberg H, Braun T
    ACS Nano 10, 4981 (2016).
    DOI: 10.1021/acsnano.6b01328
  • Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography Pfirrmann S, Voigt A, Kolander A, Grützner G, Lohse O, Harder I, Guzenko VA
    MICROELECTRONIC ENGINEERING 155, 67 (2016).
    DOI: 10.1016/j.mee.2016.02.028
  • Transmission x-ray microscopy at Diamond-Manchester I13 Imaging Branchline Vila-Comamala J, Bosgra J, Eastwood David S, Wagner U, Bodey Andrew J, Garcia-Fernandez M, David C, Rau C
    XRM 2014: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON X-RAY MICROSCOPY , (2016).
    DOI: 10.1063/1.4937530
  • Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers Reboud V, Gassenq A, Guilloy K, Dias G Osvaldo, Escalante J M, Tardif S, Pauc N, Hartmann J M, Widiez J, Gomez E, Amalric E Bellet, Fowler D, Rouchon D, Duchemin I, Niquet Y M, Rieutord F, Faist J, Geiger R, Zabel T, Marin E, Sigg H, Chelnokov A, Calvo V
    SILICON PHOTONICS XI 9752, UNSP 97520F (2016).
    DOI: 10.1117/12.2212597
  • Ultrasonic acoustic levitation for fast frame rate X-ray protein crystallography at room temperature Tsujino S, Tomizaki T
    Scientific Reports 6, 25558 (2016).
    DOI: 10.1038/srep25558
  • Van der Waals interactions and the limits of isolated atom models at interfaces Kawai S, Foster Adam S, Björkman T, Nowakowska S, Björk J, Canova F, Gade Lutz H, Jung Thomas A, Meyer E
    NATURE COMMUNICATIONS 7, 11559 (2016).
    DOI: 10.1038/ncomms11559
  • ZEP520A-A resist for electron-beam grayscale lithography and thermal reflow Kirchner R, Guzenko V A, Vartiainen I, Chidambaram N, Schift H
    MICROELECTRONIC ENGINEERING 153, 71-76 (2016).
    DOI: 10.1016/j.mee.2016.01.017
  • Zernike x-ray ptychography Vartiainen I, Mohacsi I, Stachnik K, Guizar-Sicairos M, David C, Meents A
    OPTICS LETTERS 41, 721 (2016).
    DOI: 10.1364/OL.41.000721
  • mr-PosEBR - A novel positive tone resist for high resolution electron beam lithography and 3D surface patterning Pfirrmann Stefan, Kirchner Robert, Lohse Olga, Guzenko Vitaliy A, Voigt Anja, Harder Irina, Kolander Anett, Schift Helmut, Gruetzner Gabi
    ADVANCES IN PATTERNING MATERIALS AND PROCESSES XXXIII 9779, 977925 (2016).
    DOI: 10.1117/12.2219165
  • 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications Gassenq A, Guilloy K, Dias G Osvaldo, Pauc N, Rouchon D, Hartmann J M, Widiez J, Tardif S, Rieutord F, Escalante J, Duchemin I, Niquet Y M, Geiger R, Zabel T, Sigg H, Faist J, Chelnokov A, Reboud V, Calvo V
    APPLIED PHYSICS LETTERS 107, 191904 (2015).
    DOI: 10.1063/1.4935590
  • A micro-patterned silicon chip as sample holder for macromolecular crystallography experiments with minimal background scattering Roedig P, Vartiainen I, Duman R, Panneerselvam S, Stuebe N, Lorbeer O, Warmer M, Sutton G, Stuart D I, Weckert E, David C, Wagner A, Meents A
    Scientific Reports 5, 10451 (2015).
    DOI: 10.1038/srep10451
  • Adsorption of nonmetallic elements on defect-free MgO(001) surface - DFT study Pasti Igor A, Baljozovic Milos, Skorodumova Natalia V
    SURFACE SCIENCE 632, 39-49 (2015).
    DOI: 10.1016/j.susc.2014.09.012
  • Analysis of the role of the particle-wall interaction on the separation efficiencies of field flow fractionation dielectrophoretic devices Camarda M, Scalese S, La Magna A
    ELECTROPHORESIS 36, 1396 (2015).
    DOI: 10.1002/elps.201400385
  • Artifact characterization and reduction in scanning X-ray Zernike phase contrast microscopy Vartiainen Ismo, Holzner Christian, Mohacsi Istvan, Karvinen Petri, Diaz Ana, Pigino Gaia, David Christian
    OPTICS EXPRESS 23, 13278-13293 (2015).
    DOI: 10.1364/OE.23.013278
  • Beyond EUV lithography: a comparative study of efficient photoresists' performance Mojarad Nassir, Gobrecht Jens, Ekinci Yasin
    Scientific Reports 5, 9235 (2015).
    DOI: 10.1038/srep09235
  • Bimetallic dimers adsorbed on a defect-free MgO(001) surface: bonding, structure and reactivity Pasti Igor A, Baljozovic Milos R, Granda-Marulanda Laura P, Skorodumova Natalia V
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS 17, 9666-9679 (2015).
    DOI: 10.1039/c4cp05723f
  • Bio-inspired 3D funnel structures made by grayscale electron-beam patterning and selective topography equilibration Kirchner R, Guzenko V A, Rohn M, Sonntag E, Muehlberger M, Bergmair I, Schift H
    MICROELECTRONIC ENGINEERING 141, 107-111 (2015).
    DOI: 10.1016/j.mee.2015.02.014
  • Broken vertex symmetry and finite zero-point entropy in the artificial square ice ground state Gliga Sebastian, Kakay Attila, Heyderman Laura J, Hertel Riccardo, Heinonen Olle G
    PHYSICAL REVIEW B 92, 060413 (2015).
    DOI: 10.1103/PhysRevB.92.060413
  • Caliste-SO, a CdTe based spectrometer for bright solar event observations in hard X-rays Meuris A, Limousin O, Gevin O, Blondel C, Martignac J, Vassal M -C, Soufflet F, Fiant N, Bednarzik M, Stutz S, Grimm O, Commichau V
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 787, 72-77 (2015).
    DOI: 10.1016/j.nima.2014.11.021
  • Correlated electron systems: Emitting electrons through phonons Scagnoli V, Staub U
    NATURE MATERIALS 14, 859 (2015).
    DOI: 10.1038/nmat4399
  • Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3% Luong G V, Knoll L, Blaeser S, Sueess M J, Sigg H, Schaefer A, Trellenkamp S, Bourdelle K K, Buca D, Zhao Q T, Mantl S
    SOLID-STATE ELECTRONICS 108, 19-23 (2015).
    DOI: 10.1016/j.sse.2014.12.015
  • Development of power semiconductors by quantitative nanoscale dopant imaging Bartolf H, Gysin U, Rossmann HR, Bubendorf A, Glatzel T, Jung TA, Meyer E, Zimmermann M, Reshanov S, Schoner A
    2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Proceedings , (2015).
    DOI: 10.1109/ISPSD.2015.7123444
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